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MMBT4126 Datasheet(PDF) 2 Page - Diodes Incorporated |
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MMBT4126 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 2 page ![]() DS30106 Rev. 2 - 2 2 of 2 MMBT4126 Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage V(BR)CBO -25 ¾ V IC = -10 mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -4.0 ¾ V IE = -10 mA, IC = 0 Collector Cutoff Current ICBO ¾ -50 nA VCB = -20V, IE = 0V Emitter Cutoff Current IEBO ¾ -50 nA VEB = -3.0V, IC = 0V ON CHARACTERISTICS (Note 2) DC Current Gain hFE 120 60 360 ¾ ¾ IC = -2.0mA, VCE = -1.0V IC = -50mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 V IC = -50mA, IB = -5.0mA Base- Emitter Saturation Voltage VBE(SAT) ¾ -0.95 V IC = -50mA, IB = -5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ¾ 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ¾ 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Small Signal Current Gain hfe 120 480 ¾ VCE = 1.0V, IC = -2.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 250 ¾ MHz VCE = -20V, IC = -10mA, f = 100MHz Noise Figure NF ¾ 4.0 dB VCE = -5.0V, IC = -100 mA, RS = 1.0k W, f = 1.0kHz Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 12 3 4 5 6 7 89 O N D K2B = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2B Marking Information Device Packaging Shipping MMBT4126-7 SOT-23 3000/Tape & Reel Ordering Information Date Code Key (Note 3) Note: 2. Short duration pulse test used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code JK L M N P R ST U V W |
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