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MBR3045PT Datasheet(PDF) 1 Page - Diodes Incorporated

No. de pieza MBR3045PT
Descripción Electrónicos  30A SCHOTTKY BARRIER RECTIFIER
PDF  2 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MBR3045PT Datasheet(HTML) 1 Page - Diodes Incorporated

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D
S23017 Rev. E-2
1 of 2
MBR3030PT - MBR3060PT
MBR3030PT - MBR3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
A
B
E
G
J
L
M
N
P*
*2 Places
Q
K
S
M
H
R
D
C
TO-3P
Dim
Min
Max
A
3.20
3.50
B
4.59
5.16
C
20.80
21.30
D
19.70
20.20
E
2.10
2.40
G
0.51
0.76
H
15.90
16.40
J
1.70
2.70
K
3.10
Æ
3.30
Æ
L
3.50
4.51
M
5.20
5.70
N
1.12
1.22
P
1.93
2.18
Q
2.97
3.22
R
11.70
12.80
S
4.30 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
·
Schottky Barrier Chip
·
Guard Ring Die Construction for
Transient Protection
·
Low Power Loss, High Efficiency
·
High Surge Capability
·
High Current Capability and Low Forward
Voltage Drop
·
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
·
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
·
Case: Molded Plastic
·
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
·
Polarity: As Marked on Body
·
Marking: Type Number
·
Weight: 5.6 grams (approx.)
·
Mounting Position: Any
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
3030PT
MBR
3035PT
MBR
3040PT
MBR
3045PT
MBR
3050PT
MBR
3060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
40
45
50
60
V
RMS Reverse Voltage
VR(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current
@ TC = 125
°C
(Note 1)
IO
30
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
200
A
Forward Voltage Drop
@ IF = 20A, TC = 25
°C
per element (Note 3)
@ IF = 20A, TC = 125
°C
VFM
0.65
0.60
0.75
0.65
V
Peak Reverse Current
@ TC = 25
°C
at Rated DC Blocking Voltage, per element @ TC = 125
°C
IRM
1.0
60
5.0
100
mA
Typical Junction Capacitance
(Note 2)
Cj
700
pF
Typical Thermal Resistance Junction to Case
(Note 1)
RqJc
1.4
2.0
K/W
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/µs
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width
£300 ms, duty cycle £2%.


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