TF2123G-A-AE3-R datasheet(2/4 Pages) UTC

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TF2123

N-CHANNEL JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-106. A



ABSOLUTE MAXIMUM RATINGS ( TA=25°С, unless otherwise specified )

PARAMETER

SYMBOL

RATING

UNIT

Gate Drain Voltage

VGDO

-20

Gate Current

Drain Current

Power Dissipation

100

Junction Temperature

150

°С

Storage Temperature

TSTG

-55~+150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Gate Drain Breakdown Voltage

BVGDO

IG=-100μA

-20

Gate Source Cut off Voltage

VGS(OFF)

VDS=2V, ID=1μA

-0.38

Zero-Gate Voltage Drain Current

IDSS

VDS=2V, VGS=0V

TF2123-A

100

170

μA

TF2123-B

150

270

μA

TF2123-C

210

350

μA

Drain Current

VDD=2V, RL=2.2kΩ,

Cg=5pF

IDSS=100μA

μA

IDSS=250μA

244

μA

IDSS=350μA

337

μA

Forward Transfer Admittance

lyfsl

VDS=2V, VGS=0V

1.43

Input Capacitance

CISS

VDS=2, VGS=0, f=1MHz

5.0

Voltage Gain

VDD=2V, RL=2.2kΩ,

Cg=5pF, f=1kHz,

VIN=10mV

IDSS=100μA

0.1

IDSS=250μA

1.95

IDSS=350μA

2.25

Delta Voltage Gain

∆GV

VIN=10mV, RL=2.2kΩ, Cg=5pF,

f=1kH, VDD=2V to1.5V

-0.5

Frequency Characteristic

∆GV(f)

VIN=10mV, RL=2.2kΩ, Cg=5pF,

VDD=2V, f=1kHz to 110kHz

-0.2

Output Noise Voltage

VNO

VDD=2V, Cg=5pF,

A-curve filter

RL=1kΩ

-107

RL=2.2kΩ

-102

Total Harmonic distortion

THD

VDD=2V, RL=2.2kΩ, Cg=5pF, f=1kHz,

VIN=50mV

0.9



CLASSIFICATION OF IDSS

RANK

RANGE

100-170

150-270

210-350

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