2SC4467

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R214-018.B



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

160

V

Collector-Emitter Voltage

120

V

Emitter-Base Voltage

6

V

Collector Current

8

A

Base Current

3

A

80

W

Junction Temperature

150

°C

Storage Temperature

-55 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector Cut-Off Current

10

µA

Emitter Cut-Off Current

10

µA

Collector-Emitter Breakdown Voltage

120

V

DC Current Gain

50

Collector-Emitter Saturation Voltage

1.5

V

Current Gain Bandwidth Product

20

MHz

Output Capacitance

200

pF

Switching time

Turn-on time

0.13

µS

Storage time

3.50

µS

Fall time

0.32

µS



RANK

O

P

Y

RANGE

50~100

70~140

90~180