1

TP3022B

MOTOROLA RF DEVICE DATA

The RF Line

UHF Power Transistor

The TP3022B is designed for common–emitter operation in the 900 MHz

mobile radio band. Use of gold metallization and silicon diffused ballast

resistors results in a medium power output/driver transistor with state–of–the–

art ruggedness and reliability.

• Specified 26 Volts, 960 MHz Characteristics:

Output Power = 15 Watts

Minimum Gain = 8.5 dB

IQ = 50 mA

• Class AB Operation

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

29

0.167

Vdc

Operating Junction Temperature

TJ

200

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (1)

R

θJC

6.0

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Breakdown Voltage

(IC = 10 mA, RBE = 75 Ohms)

V(BR)CER

40

—

—

Vdc

Collector–Emitter Leakage

(VCE = 26 V, RBE = 75 Ohms)

ICER

—

—

5.0

mA

Emitter–Base Breakdown Voltage

(IC = 5.0 mAdc)

V(BR)EBO

3.5

—

—

Vdc

Emitter–Base Leakage

(VBE = 2.5 V)

IEBO

—

—

1.0

mA

ON CHARACTERISTICS

DC Current Gain

(IC = 500 mA, VCE = 10 V)

hFE

15

—

100

—

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 24 V, IE = 0, f = 1.0 MHz)

Cob

—

17

25

pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA)

GPE

8.5

—

—

dB

Collector Efficiency

(VCE = 26 V, Pout = 15 W, f = 960 MHz, IQ = 50 mA)

ηc

45

—

—

%

NOTE:

1. Thermal resistance is determined under specified RF operating condition.

Order this document

by TP3022B/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

TP3022B

15 W, 960 MHz

NPN SILICON

UHF POWER

TRANSISTOR

CASE 319–07, STYLE 2