MJE13003L-E-TN3-R datasheet(1/9 Pages) UTC

No. de pieza	MJE13003L-E-TN3-R

Descripción Electrónicos	NPN SILICON POWER TRANSISTOR

PDF	9 Pages

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Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

MJE13003

NPN SILICON TRANSISTOR

www.unisonic.com.tw

1 of 9

QW-R204-004.S

NPN SILICON POWER

TRANSISTOR



DESCRIPTION

These devices are designed for high-voltage, high-speed

power switching inductive circuits where fall time is critical. They

are particularly suited for 115 and 220V applications in switch

mode.



FEATURES

* Reverse biased SOA with inductive load @ TC=100°C

* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C

Typical tC = 290ns @ 1A, 100°C.

* 700V blocking capability



APPLICATIONS

* Switching regulator’s, inverters

* Motor controls

* Solenoid/relay drivers

* Deflection circuits

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