CMPTA96 datasheet(1/2 Pages) CENTRAL

No. de pieza	CMPTA96

Descripción Electrónicos	SURFACE MOUNT PNP SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR

PDF	2 Pages

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Fabricante Electrónico	CENTRAL [Central Semiconductor Corp]

Página de inicio	http://www.centralsemi.com

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DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTA96

type is a surface mount epoxy molded PNP

silicon planar epitaxial transistors designed for

extremely

high

voltage

applications.

Marking Code is C96.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

450

V

Collector-Emitter Voltage

VCEO

450

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

500

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS:

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=400V

100

nA

IEBO

VBE=4.0V

100

nA

BVCBO

IC=100µA

450

500

V

BVCEO

IC=1.0mA

450

490

V

BVEBO

IE=10µA

6.0

9.7

V

VCE(SAT)

IC=1.0mA, IB=0.1mA

0.20

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.30

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.15

0.50

V

VBE(SAT)

IC=10mA, IB=1.0mA

1.0

V

hFE

VCE=10V, IC=1.0mA

40

hFE

VCE=10V, IC=10mA

50

120

200

hFE

VCE=10V, IC=50mA

45

hFE

VCE=10V, IC=100mA

25

35

fT

VCE=10V, IC=10mA, f=10MHz

20

MHz

Cob

VCB=20V, IE=0, f=1.0MHz

7.0

pF

Cib

VEB=0.5V, IC=0, f=1.0MHz

130

CMPTA96

SURFACE MOUNT

PNP SILICON

EXTREMELY HIGH VOLTAGE

TRANSISTOR

SOT-23 CASE

Central

Semiconductor Corp.

TM

R1 ( 14-June2001)

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Central Semiconductor C...	CMPTA96	328Kb / 2P	SURFACE MOUNT EXTREMELY HIGH VOLTAGE PNP SILICON TRANSISTOR
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	CMPTA96	328Kb / 2P	SURFACE MOUNT EXTREMELY HIGH VOLTAGE PNP SILICON TRANSISTOR
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CMPTA96 Datasheet(PDF) 1 Page - Central Semiconductor Corp

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