CMPT3646 datasheet(1/2 Pages) CENTRAL

No. de pieza	CMPT3646

Descripción Electrónicos	NPN SILICON TRANSISTOR

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Fabricante Electrónico	CENTRAL [Central Semiconductor Corp]

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Central

Semiconductor Corp.

TM

170

MAXIMUM RATINGS (TA=25

oC)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCES

40

V

Collector-Emitter Voltage

VCEO

15

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

200

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

oC

Thermal Resistance

ΘJA

357

oC/W

ELECTRICAL CHARACTERISTICS (TA=25

oC unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICES

VCE=20V

0.5

µA

ICES

VCE=20V, TA=65

oC

3.0

µA

BVCBO

IC=100µA

40

V

BVCES

IC=10µA

40

V

BVCEO

IC=10mA

15

V

BVEBO

IE=100µA

5.0

V

VCE(SAT)

IC=30mA, IB=3.0mA

0.20

V

VCE(SAT)

IC=30mA, IB=3.0mA, TA=65

oC

0.30

V

VCE(SAT)

IC=100mA, IB=10mA

0.28

V

VCE(SAT)

IC=300mA, IB=30mA

0.50

V

VBE(SAT)

IC=30mA, IB=3.0mA

0.75

0.95

V

VBE(SAT)

IC=100mA, IB=10mA

1.20

V

VBE(SAT)

IC=300mA, IB=30mA

1.70

V

hFE

VCE=0.4V, IC=30mA

30

120

hFE

VCE=0.5V, IC=100mA

25

SOT-23 CASE

CMPT3646

NPN SILICON TRANSISTOR

DESCRIPTION:

The

CENTRAL

SEMICONDUCTOR

CMPT3646 type is an NPN Silicon Transistor

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for high current, ultra high speed

switching applications.

Marking code is C2R.

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CMPT3646 Datasheet(PDF) 1 Page - Central Semiconductor Corp

CMPT3646 Datasheet(HTML) 1 Page - Central Semiconductor Corp

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