BAS28 datasheet(1/2 Pages) CENTRAL

No. de pieza	BAS28

Descripción Electrónicos	DUAL, ISOLATED HIGH SPEED SWITCHING DIODE

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Fabricante Electrónico	CENTRAL [Central Semiconductor Corp]

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58

Central

Semiconductor Corp.

TM

BAS28

DUAL, ISOLATED HIGH SPEED

SWITCHING DIODE

SOT-143 CASE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BAS28

type is a ultra-high speed silicon switching

diode manufactured by the epitaxial planar

process, in an epoxy molded surface mount

package with isolated dual diodes, designed

for high speed switching applications.

Marking code is A61.

MAXIMUM RATINGS (TA=25

oC)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

75

V

Peak Repetitive Reverse Voltage

VRRM

85

V

Continuous Forward Current

IF

250

mA

Peak Repetitive Forward Current

IFRM

250

mA

Forward Surge Current, tp=1

µsec.

IFSM

4000

mA

Forward Surge Current, tp=1 msec.

IFSM

2000

mA

Forward Surge Current, tp=1 sec.

IFSM

1000

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

oC

Thermal Resistance

ΘJA

357

oC/W

ELECTRICAL CHARACTERISTICS (TA=25

oC unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=25V, TA=150

oC

30

µA

IR

VR=75V

1.0

µA

IR

VR=75V, TA=150

oC

50

µA

VF

IF=1.0mA

0.715

V

VF

IF=10mA

0.855

V

VF

IF=50mA

1.000

V

VF

IF=150mA

1.250

V

CT

VR=0, f=1 MHz

2.0

pF

trr

IF=IR=10mA, RL=100Ω, Rec. to 1.0mA

6.0

ns

Qs

IF=10mA, VR=5.0V, RL=500Ω

45

pC

VFR

IF=10mA, tr=20ns

1.75

V

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