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STGP20V60DF Datasheet(PDF) 7 Page - List of Unclassifed Manufacturers

No. de pieza STGP20V60DF
Descripción Electrónicos  600 V, 20 A very high speed trench gate field-stop IGBT
PDF  23 Pages
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Fabricante Electrónico  ETC2 [List of Unclassifed Manufacturers]
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STGP20V60DF Datasheet(HTML) 7 Page - List of Unclassifed Manufacturers

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DocID024360 Rev 3
7/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical characteristics
Figure 8. Collector current vs. switching
frequency
Figure 9. Forward bias safe operating area
Figure 10. Transfer characteristics
Figure 11. Diode VF vs. forward current
Figure 12. Normalized VGE(th) vs. junction
temperature
Figure 13. Normalized BVCES vs. junction
temperature
AM17194v1
0
10
20
30
40
50
60
70
1
10
f (kHz)
Ic [A]
rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=4.7ohm,Vge=0/15V, Tj=175°C)
Tc = 100°C
Tc = 80°C
AM17179v1
0.01
0.1
1
10
110
100
IC (A)
VCE (V)
10 μs
100 μs
1 ms
(single pulse T
C =25 °C,
T
J <=175 °C; VGE =15 V)
AM17173v1
TJ=175°C
10
20
30
40
50
60
70
78
9
10
11
IC (A)
VGE (V)
-40°C
25°C
AM17178v1
0.8
1.2
1.6
2
2.4
10
15
20
25
30
35
VF (V)
IF (A)
T =175 °C
25°C
-40°C
J
AM17181v1
0.6
0.7
0.8
0.9
1.0
1.1
-50
0
50
100
150
VGE(th)
norm (V)
TJ(ºC)
V = 5V
GE
AM17180v1
0.9
1.0
1.1
-50
0
50
100
150
BVces
norm
(V)
TJ(ºC)



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