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HTB1-600 Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HTB1-600 Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
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1 / 6 page ![]() ◎ SEMIHOW REV.1.0 Jan 2006 Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=1A) High Commutation dv/dt FEATURES HTB1-600 BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) The TRIAC HTB1-600 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. General Description VDRM = 600 V IT(RMS) = 1.0A 1.T1 Symbol 3.T2 2.Gate Absolute Maximum Ratings (Ta=25℃) Symbol Parameter Value Units VDRM Repetitive Peak Off-State Voltage 600 V IT(RMS) R.M.SOn-State Current (Ta = 95 ℃)1 A VGM Peak Gate Voltage 6 V IGM Peak Gate Current 0.5 A PG(AV) Average Gate Power Dissipation 0.1 W PGM Peak Gate Power Dissipation 1 W TSTG Storage Temperature Range -40 to +125 ℃ Tj OperatingTemperature -40 to +125 ℃ ITSM 9.1/10 A Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) TO-92 1. T1 2. Gate 3. T2 2 1 3 |
Número de pieza similar - HTB1-600 |
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Descripción similar - HTB1-600 |
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