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PSD43F06 Datasheet(PDF) 1 Page - Powersem GmbH

No. de pieza PSD43F06
Descripción Electrónicos  Three Phase Rectifier Bridge
PDF  1 Pages
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Fabricante Electrónico  POWERSEM [Powersem GmbH]
Página de inicio  http://www.powersem.com
Logo POWERSEM - Powersem GmbH

PSD43F06 Datasheet(HTML) 1 Page - Powersem GmbH

  PSD43F06 Datasheet HTML 1Page - Powersem GmbH  
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Three Phase
PSD 43F
I
dAV
= 56 A
Rectifier Bridge
V
RRM
= 400 - 600 V
with fast Recovery Epitaxial Diode (FRED)
trr
= 35 ns
Preliminary Data Sheet
Features
•
Package with DCB ceramic base plate
•
Isolation voltage 3000 V
∼
•
Planar glass passivated chips
•
Low forward voltage drop
•
Leads suitable for PC board
soldering
•
UL registered, E 148688
Applications
•
Supplies for DC power equipment
•
Input and output rectifier for high
frequency
•
Battery DC power supplies
•
Field supply for DC motors
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature and power
cycling capability
•
Low noise switching
•
Small and light weight
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Data according to IEC 60747 refer to a single diode unless otherwise stated
*- for resistive load at bridge output
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 1
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
~
A
K
~H
~N
-
+
Symbol
Test Conditions
Maximum Ratings
I*
dAV
T
C = 85 °C,
(per module)
56
A
I
dAVM
90
A
I
FSM
T
VJ = 45 °C
t = 10 ms (50 Hz), sine
110
A
V
R = 0
t = 8.3 ms (60 Hz), sine
120
A
T
VJ = TVJM
t = 10 ms (50 Hz), sine
95
A
V
R = 0
t = 8.3 ms (60 Hz), sine
105
A
∫∫∫∫∫ i2 dt
T
VJ = 45 °C
t = 10 ms (50 Hz), sine
60
A²s
V
R = 0
t = 8.3 ms (60 Hz), sine
60
A²s
T
VJ = TVJM
t = 10 ms (50 Hz), sine
45
A²s
V
R = 0
t = 8.3 ms (60 Hz), sine
45
A²s
T
VJ
-40... + 150
°C
T
VJM
150
°C
T
stg
-40... + 125
°C
V
ISOL
50/60 Hz, RMS t = 1 min
2500
V
∼
I
ISOL ≤ 1 mA
t = 1 s
3000
V
∼
M
d
Mounting torque
(M4)
1.5 - 1.8
Nm
14 - 16
lb.in.
Weight
typ.
16
g
Symbol
Test Conditions
Characteristic Value
I
R
V
R = VRRM, TVJ = TVJM
≤
0.5
mA
V
R = VRRM, TVJ = 25°C
≤
0
.1
mA
V
F
I
F = 15 A,
T
VJ = 25 °C
≤
2.01
V
V
TO
For power-loss calculations only
1.13
V
r
T
13
m
Ω
R
thJC
per diode; DC
1.6
K/W
per module
0.27
K/W
R
thJK
per diode; DC
1.9
K/W
per module
0.32
K/W
I
RM
I
F=25A; -diF/dt=100A/µs; VR=100V
typ. 4
A
L
=0.05 mH; T
VJ= 100°C
t
rr
I
F=1A; -diF/dt=100A/µs; VR=30V;
typ. 35
ns
T
VJ= 25°C
d
s
Creeping distance on surface
11.2
mm
d
A
Creeping distance in air
9.7
mm
a
Max. allowable acceleration
50
m/s²
V
RSM
V
RRM
Type
V
DSM
V
DRM
(V)
(V)
400
400 PSD 43F/04
600
600 PSD 43F/06


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