BUJD203AX datasheet(1/14 Pages) PHILIPS

No. de pieza	BUJD203AX

Descripción Electrónicos	NPN power transistor with integrated diode

PDF	14 Pages

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Fabricante Electrónico	PHILIPS [NXP Semiconductors]

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1.

Product profile

1.1 General description

High voltage, high speed, planar passivated NPN power switching transistor with

integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package.

1.2 Features and benefits

Fast switching

High voltage capability

Integrated anti-parallel E-C diode

Isolated package

Very low switching and conduction

losses

1.3 Applications

DC-to-DC converters

Electronic lighting ballasts

Inverters

Motor control systems

1.4 Quick reference data

BUJD203AX

NPN power transistor with integrated diode

Rev. 01 — 27 September 2010

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IC

collector current

see Figure 1; see Figure 2; DC;

see Figure 4

--4

A

Ptot

total power

dissipation

Th ≤ 25 °C; see Figure 3

--26

W

VCESM

collector-emitter

peak voltage

VBE = 0 V

--850

V

Static characteristics

hFE

DC current gain

IC =500 mA; VCE =5 V;

see Figure 11; Th =25 °C

13

21

32

VCE =5 V; IC = 3 A; see Figure 11;

Th =25 °C

-12.5

-

VCEOsus

collector-emitter

sustaining voltage

IB =0A; LC =25mH; IC =10mA;

see Figure 6; see Figure 7

400

450

-

V

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