STP190N55LF3 datasheet(1/12 Pages) STMICROELECTRONICS

No. de pieza	STP190N55LF3

Descripción Electrónicos	N-channel 55 V, 2.9 miliohm, 120 A, TO-220

PDF	12 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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1 / 12 page

November 2008

Rev 1

1/12

12

STP190N55LF3

N-channel 55 V, 2.9 m

Ω, 120 A, TO-220

STripFET™ Power MOSFET

Features

■ Logic level drive

■ 100% avalanche tested

Application

■ Switching applications

– Automotive

Description

This n-channel enhancement mode Power

MOSFET is the latest refinement of

STMicroelectronics' unique “single feature size”

strip-based process, which has decreased the

critical alignment steps, offering remarkable

manufacturing reproducibility. The outcome is a

transistor with extremely high packing density for

low on resistance, rugged avalanche

characteristics and low gate charge.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max

ID

PD

STP190N55LF3

55 V

< 3.7 m

Ω 120 A 312 W

TO-220

1

2

3

Table 1.

Device summary

Order code

Marking

Package

Packaging

STP190N55LF3

190N55LF3

TO-220

Tube

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STP190N55LF3 Datasheet(PDF) 1 Page - STMicroelectronics

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