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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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STM32F103RG Datasheet(PDF) 64 Page - STMicroelectronics |
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STM32F103RG Datasheet(HTML) 64 Page - STMicroelectronics |
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64 / 120 page  Electrical characteristics STM32F103xF, STM32F103xG 64/120 Doc ID 16554 Rev 3 Table 32. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1) 1. CL = 15 pF. Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time 3tHCLK + 0.5 3tHCLK + 1.5 ns tv(NWE_NE) FSMC_NEx low to FSMC_NWE low tHCLK + 0.5 tHCLK + 1.5 ns tw(NWE) FSMC_NWE low time tHCLK – 0.5 tHCLK + 1 ns th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time tHCLK – 0.5 - ns tv(A_NE) FSMC_NEx low to FSMC_A valid - 0 ns th(A_NWE) Address hold time after FSMC_NWE high tHCLK -ns tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 1.5 ns th(BL_NWE) FSMC_BL hold time after FSMC_NWE high tHCLK – 1.5 - ns tv(Data_NE) FSMC_NEx low to Data valid - tHCLK ns th(Data_NWE) Data hold time after FSMC_NWE high tHCLK -ns tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 0 ns tw(NADV) FSMC_NADV low time - tHCLK + 1.5 ns Table 33. Asynchronous read muxed Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time 7tHCLK + 0.5 7tHCLK + 2 ns tv(NOE_NE) FSMC_NEx low to FSMC_NOE low 3tHCLK + 0.5 3tHCLK + 1.5 tw(NOE) FSMC_NOE low time 4tHCLK – 1 4tHCLK + 1 th(NE_NOE) FSMC_NOE high to FSMC_NE high hold time 0.5 - tv(A_NE) FSMC_NEx low to FSMC_A valid - 0 tv(NADV_NE) FSMC_NEx low to FSMC_NADV low 0 1 tw(NADV) FSMC_NADV low time tHCLK + 0.5 tHCLK + 2 th(AD_NADV) FSMC_AD (address) valid hold time after FSMC NADV high tHCLK - th(A_NOE) Address hold time after FSMC_NOE high tHCLK – 2 - th(BL_NOE) FSMC_BL time after FSMC_NOE high 0.5 - tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0 tsu(Data_NE) Data to FSMC_NEx high setup time 4tHCLK – 0.5 - tsu(Data_NOE) Data to FSMC_NOE high setup time 4tHCLK – 1 - th(Data_NE) Data hold time after FSMC_NEx high 0 - th(Data_NOE) Data hold time after FSMC_NOE high 0 - |
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