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BYW99P Datasheet(PDF) 2 Page - STMicroelectronics |
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BYW99P Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() Obsolete Product(s) - Obsolete Product(s) Symbol Test Conditions Min. Typ. Max. Unit IR * Tj = 25 °CVR = VRRM 20 µA Tj = 100 °C 1.5 mA VF ** Tj = 125 °CIF = 12 A 0.85 V Tj = 125 °CIF = 25 A 1.05 Tj = 25 °CIF = 25 A 1.15 Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.016 x IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol Test Conditions Min. Typ. Max. Unit trr Tj = 25 °CIF = 0.5A IR = 1A Irr = 0.25A 25 ns IF = 1A VR = 30V dIF/dt = -50A/ µs40 tfr Tj = 25 °CIF = 1A VFR = 1.1 x VF tr = 10 ns 15 ns VFP Tj = 25 °CIF = 1A tr = 10 ns 2 V RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case SOT93 / TO247 Per diode 1.8 °C/W Total 1.0 TOP3I Per diode 2.0 Total 1.25 Rth (c) Coupling SOT93 / TO247 0.2 °C/W TOP3I 0.5 When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCES BYW99P/PI/W 2/6 |
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