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AMC010CFLKA Datasheet(PDF) 24 Page - Advanced Micro Devices |
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AMC010CFLKA Datasheet(HTML) 24 Page - Advanced Micro Devices |
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24 / 42 page ![]() 24 AmC0XXCFLKA 5/4/98 WORD-WIDE PROGRAMMING AND ERASING Word-Wide Programming The Word-Wide Programming sequence will be as usual per Table 5. The Program word command is A0A0H. Each byte is independently programmed. For example, if the high byte of the word indicates the suc- cessful completion of programming via one of its write status bits such as D15, software polling should con- tinue to monitor the low byte for write completion and data verification, or vice versa. During the Embedded Programming operations the device executes program- ming pulses in 16 µs increments. Status reads provide information on the progress of the byte programming relative to the last complete write pulse. Status informa- tion is automatically updated upon completion of each internal write pulse. Status information does not change within the 16 µs write pulse width. Word-Wide Erasing The Word-Wide Erasing of a memory segment pair is similar to word-wide programming. The erase word command is a 6 bus cycle command sequence per Table 5. Each byte is independently erased and veri- fied. Word-wide erasure reduces total erase time when compared to byte erasure. Each Flash memory device in the card may erase at different rates. Therefore each device (byte) must be verified separately. 18723C-13 Figure 12. Embedded Algorithm Word-Wide Programming and Erasure Overview Software polling from memory segments Write Embedded Programming or Erase command sequence to memory segments Completed The Embedded Algorithm operations completely automate the parallel programming and erase procedures by inter- nally executing the algorithmic command sequences of AMD’s Flashrite and Flasherase algorithms. The devices automatically provide Write Operation Status information with standard read operations. See Table 5 for Program Command Sequence. Start |
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