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AMC008DFLKA Datasheet(PDF) 27 Page - Advanced Micro Devices |
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AMC008DFLKA Datasheet(HTML) 27 Page - Advanced Micro Devices |
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27 / 46 page ![]() AmC0XXDFLKA 27 WORD-WIDE PROGRAMMING AND ERASING Word-Wide Programming The word-wide programming sequence will be as usual per Table 5. The Program word command is A0A0H. Each byte is independently programmed. For example, if the high byte of the word indicates the successful completion of programming via one of its write status bits such as D15, software polling should continue to monitor the low byte for write completion and data verification, or vice versa. Dur- ing the Embedded Programming operations the de- vice ex ecutes prog r amming pulses in 8 µs increments. Status reads provide information on the progress of the byte programming relative to the last complete write pulse. Status information is automat- ically updated upon completion of each internal write pulse. Status information does not change within the 8 µs write pulse width. Word-Wide Sector Erasing The word-wide erasing of a memory sector pair is sim- ilar to word-wide programming. The erase word com- mand is a 6 bus cycle command sequence per Table 5. Each byte is independently erased and verified. Word-wide erasure reduces total erase time when compared to byte erasure. Each Flash memory device in the card may erase at different rates. Therefore each device (byte) must be verified separately. 19521D-13 Figure 12. Embedded Algorithm Word-Wide Programming and Erasure Overview Software polling from memory segments Write Embedded Programming or Erase command sequence to memory segments Completed The Embedded Algorithm operations completely automate the parallel programming and erase procedures by inter- nally executing the algorithmic command sequences of AMD’s Flashrite and Flasherase algorithms. The devices automatically provide Write Operation Status information with standard read operations. See Table 5 for Program Command Sequence. Start |
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