MTSF2P02HD datasheet(4/12 Pages) MOTOROLA

No. de pieza	MTSF2P02HD

Descripción Electrónicos	SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM

PDF	12 Pages

Scroll/Zoom	100%

Fabricante Electrónico	MOTOROLA [Motorola, Inc]

Página de inicio	http://www.freescale.com

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MTSF2P02HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

2.7 V

VGS = 4.5 V

TJ = 25°C

2.3 V

2.1 V

1.9 V

3.5 V

4.5 V

VGS = 8 V

1.7 V

1.5 V

0.4

1.6

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 4. Transfer Characteristics

0.05

Figure 5. On–Resistance versus

Gate–to–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 6. On–Resistance versus Drain Current

and Gate Voltage

100

Figure 7. On–Resistance Variation

with Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 8. Drain–to–Source Leakage Current

versus Voltage

VDS ≥ 10 V

TJ = –55°C

°C

100

°C

2.5

0.5

0.15

0.09

TJ, JUNCTION TEMPERATURE (°C)

– 50

100

150

0.5

1.0

1.5

2.0

VGS = 4.5 V

ID = 1.2 A

125

–25

VGS = 0 V

TJ = 125°C

100

°C

1.2

1.5

0.11

0.13

1000

0.01

°C

0.8

0.11

0.13

0.15

0.09

0.05

0.07

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID = 2.4 A

TJ = 25°C

0.07

2.9 V

2.7 V

2.5 V

0.1

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