BAV23 datasheet(1/13 Pages) NXP

No. de pieza	BAV23

Descripción Electrónicos	Dual high-voltage switching diodes

PDF	13 Pages

Scroll/Zoom	100%

Fabricante Electrónico	NXP [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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1 / 13 page

1.

Product profile

1.1 General description

Dual high-voltage switching diodes, encapsulated in small Surface-Mounted

Device (SMD) plastic packages.

1.2 Features and benefits

1.3 Applications

 High-speed switching at high voltage

 High-voltage general-purpose switching

1.4 Quick reference data

[1]

When switched from IF = 10 mA to IR =10mA; RL = 100 ; measured at IR =1mA.

BAV23 series

Dual high-voltage switching diodes

Rev. 07 — 19 March 2010

Product data sheet

Table 1.

Product overview

Type number

Package

Configuration

NXP

JEDEC

BAV23A

SOT23

TO-236AB

dual common anode

BAV23C

SOT23

TO-236AB

dual common cathode

BAV23S

SOT23

TO-236AB

dual series

BAV23

SOT143B

-

dual isolated

 High switching speed: trr  50 ns

 Low capacitance: Cd  2pF

 Low leakage current

 Small SMD plastic package

 Repetitive peak reverse voltage:

VRRM  250 V

Table 2.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IR

reverse current

VR = 200 V

-

100

nA

VR

reverse voltage

-

200

V

trr

reverse recovery time

[1] --

50

ns

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