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2SC2873Y Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC2873Y Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SC2873 2006-11-10 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) (Note 3) VCE = 2 V, IC = 0.5 A 70 ― 240 DC current gain hFE (2) VCE = 2 V, IC = 2.0 A 20 ― ― ― Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A ― ― 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.05 A ― ― 1.2 V Transition frequency fT VCE = 2 V, IC = 0.5 A ― 120 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 30 ― pF Turn-on time ton ― 0.1 ― Storage time tstg ― 1.0 ― Switching time Fall time tf ― 0.1 ― μs Note 3: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking IB1 IB1 20 μs IB1 = −IB2 = 0.05 A, DUTY CYCLE ≤ 1% IB2 IB2 OUTPUT INPUT M Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator |
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