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MTDF1C02HD Datasheet(PDF) 5 Page - Motorola, Inc |
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MTDF1C02HD Datasheet(HTML) 5 Page - Motorola, Inc |
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5 / 14 page ![]() MTDF1C02HD 5 Motorola TMOS Power MOSFET Transistor Device Data N–Channel P–Channel Figure 3. On–Resistance versus Gate–To–Source Voltage Figure 4. On–Resistance versus Drain Current and Gate Voltage Figure 5. On–Resistance Variation with Temperature Figure 3. On–Resistance versus Gate–To–Source Voltage Figure 4. On–Resistance versus Drain Current and Gate Voltage Figure 5. On–Resistance Variation with Temperature TYPICAL ELECTRICAL CHARACTERISTICS 0.4 0.5 0.6 0.3 0.1 0.2 0 2.0 4.0 8.0 6.0 10 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) ID = 1.7 A TJ = 25°C 0 2.7 V VGS = 4.5 V TJ = 25°C 0.05 ID, DRAIN CURRENT (AMPS) 0.15 0 1.0 2.0 0.09 3.0 4.0 0.11 0.13 0.07 TJ, JUNCTION TEMPERATURE (°C) – 50 0 50 100 150 0 0.4 1.2 1.6 2.0 VGS = 4.5 V ID = 0.85 A 125 75 25 –25 0.8 0 VGS, GATE–TO–SOURCE (VOLTS) 0.4 0.3 0.2 0.1 0 2.0 4.0 6.0 8.0 10 ID = 1.6 A TJ = 25°C ID, DRAIN CURRENT (AMPS) 1.0 0 0.5 0.4 0.3 0.2 0.1 0 2.0 3.0 4.0 TJ = 25°C VGS = 4.5 V 2.7 V 0.6 –25 25 –50 TJ, JUNCTION TEMPERATURE (°C) 2.0 1.5 1.0 0.5 0 0 50 100 75 125 150 VGS = 4.5 V ID = 0.8 A |
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