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RFP30N06LE Datasheet(PDF) 4 Page - Harris Corporation

No. de pieza RFP30N06LE
Descripción Electrónicos  30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
PDF  6 Pages
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Fabricante Electrónico  HARRIS [Harris Corporation]
Página de inicio  http://www.harris.com
Logo HARRIS - Harris Corporation

RFP30N06LE Datasheet(HTML) 4 Page - Harris Corporation

  RFP30N06LE Datasheet HTML 1Page - Harris Corporation RFP30N06LE Datasheet HTML 2Page - Harris Corporation RFP30N06LE Datasheet HTML 3Page - Harris Corporation RFP30N06LE Datasheet HTML 4Page - Harris Corporation RFP30N06LE Datasheet HTML 5Page - Harris Corporation RFP30N06LE Datasheet HTML 6Page - Harris Corporation  
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RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
FIGURE 11. TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE
VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
Typical Performance Curves (Continued)
TJ, JUNCTION TEMPERATURE (
oC)
PULSE DURATION = 250
µs, V
GS = 5V, ID = 30A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-80
-40
040
80
120
160
200
TJ , JUNCTION TEMPERATURE (
oC)
-80
-40
04080
120
200
160
0.0
0.5
1.0
1.5
2.0
VGS = VDS, ID = 250µA
ID = 250µA
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (
oC)
TC, CASE TEMPERATURE (
oC)
25
50
75
100
125
150
175
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS = 0V, f = 1MHz
2000
1500
500
0
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
CRSS
1000
COSS
CISS
60
45
30
15
0
5.00
3.75
2.50
1.25
0.00
VDD = BVDSS
VDD = BVDSS
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
RL = 2.0Ω
IG(REF) = 0.62mA
VGS = 5V
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
IG(REF)
IG(ACT)
t, TIME (s)
20
IG(REF)
IG(ACT)
80



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