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VMV3 Datasheet(PDF) 63 Page - Microsemi Corporation

No. de pieza VMV3
Descripción Electrónicos  Military ProASIC3/EL Low Power Flash FPGAs with Flash*Freeze Technology
PDF  212 Pages
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

VMV3 Datasheet(HTML) 63 Page - Microsemi Corporation

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Military ProASIC3/EL Low Power Flash FPGAs
Revision 3
2-49
Table 2-65 • 3.3 V LVCMOS Wide Range Low Slew
Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V
Applicable to Advanced I/O Banks
Drive
Strength
Equiv.
Software
Default
Drive
Strength
Option1
Speed
Grade
tDOUT tDP
tDIN tPY tEOUT tZL
tZH
tLZ
tHZ
tZLS
tZHS Units
100 µA
4 mA
Std.
0.63
9.67 0.05 1.70
0.45
9.67 8.03 4.50 4.18 13.40 11.77
ns
–1
0.54
8.22 0.04 1.44
0.39
8.22 6.83 3.83 3.55 11.40 10.01
ns
100 µA
6mA
Std.
0.63
8.13 0.05 1.70
0.45
8.13 6.95 5.07 5.17 11.86 10.69
ns
–1
0.54
6.91 0.04 1.44
0.39
6.91 5.92 4.31 4.40 10.09
9.09
ns
100 µA
8 mA
Std.
0.63
8.13 0.05 1.70
0.45
8.13 6.95 5.07 5.17 11.86 10.69
ns
–1
0.54
6.91 0.04 1.44
0.39
6.91 5.92 4.31 4.40 10.09
9.09
ns
100 µA
12 mA
Std.
0.63
6.96 0.05 1.70
0.45
6.96 6.15 5.45 5.81 10.70
9.89
ns
–1
0.54
5.92 0.04 1.44
0.39
5.92 5.24 4.64 4.94 9.10
8.41
ns
100 µA
16 mA
Std.
0.63
6.61 0.05 1.70
0.45
6.61 5.96 5.54 5.97 10.34
9.70
ns
–1
0.54
5.62 0.04 1.44
0.39
5.62 5.07 4.71 5.08 8.80
8.25
ns
Notes:
1. Note that 3.3 V LVCMOS wide range is applicable to 100 µA drive strength only. The configuration will not operate at the
equivalent software default drive strength. These values are for normal ranges ONLY.
2. For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating values.
Table 2-66 • 3.3 V LVCMOS Wide Range High Slew
Military-Case Conditions: TJ = 125°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V
Applicable to Advanced I/O Banks
Drive
Strength
Equiv.
Software
Default
Drive
Strength
Option1
Speed
Grade
tDOUT
tDP
tDIN tPY tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS Units
100 µA
4 mA
Std.
0.63
5.49 0.05 1.70 0.45
5.49
4.23 4.51 4.44 9.22
7.97
ns
–1
0.54
4.67 0.04 1.44 0.39
4.57
3.60 3.83 3.78 7.84
6.78
ns
100 µA
6 mA
Std.
0.63
4.56 0.05 1.70 0.45
4.56
3.42 5.08 5.45 8.29
7.15
ns
–1
0.54
3.88 0.04 1.44 0.39
3.88
2.91 4.32 4.64 7.05
6.08
ns
100 µA
8 mA
Std.
0.63
4.56 0.05 1.70 0.45
4.56
3.42 5.08 5.45 8.29
7.15
ns
–1
0.54
3.88 0.04 1.44 0.39
3.88
2.91 4.32 4.64 7.05
6.08
ns
100 µA
12 mA
Std.
0.63
4.08 0.05 1.70 0.45
4.08
3.03 5.46 6.09 7.81
6.76
ns
–1
0.54
3.47 0.04 1.44 0.39
3.47
2.57 4.65 5.18 6.64
5.75
ns
100 µA
16 mA
Std.
0.63
4.00 0.05 1.70 0.45
4.00
2.96 5.55 6.26 7.73
6.69
ns
–1
0.54
3.40 0.04 1.44 0.39
3.40
2.51 4.72 5.32 6.58
5.69
ns
Notes:
1. Note that 3.3 V LVCMOS wide range is applicable to 100 µA drive strength only. The configuration will not operate at the
equivalent software default drive strength. These values are for normal ranges only.
2. For specific junction temperature and voltage supply levels, refer to Table 2-5 on page 2-8 for derating values.



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