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2SC5508 Datasheet(PDF) 5 Page - Renesas Technology Corp

No. de pieza 2SC5508
Descripción Electrónicos  NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
PDF  10 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5508 Datasheet(HTML) 5 Page - Renesas Technology Corp

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2SC5508
Chapter Title
R09DS0055EJ0200 Rev.2.00
Page 5 of 8
Mar 5, 2013
Noise Characteristics
Collector Current IC (mA)
Collector Current IC (mA)
Collector Current IC (mA)
Collector Current IC (mA)
6
5
4
3
2
1
0
1
10
100
30
25
20
15
10
5
0
NF
f = 1.0 GHz
VCE = 2 V
Ga
6
5
4
3
2
1
0
30
25
20
15
10
5
0
1
10
100
Ga
NF
f = 1.5 GHz
VCE = 2 V
1
10
100
6
5
4
3
2
1
0
30
25
20
15
10
5
0
Ga
NF
f = 2.0 GHz
VCE = 2 V
1
10
100
6
5
4
3
2
1
0
30
25
20
15
10
5
0
Ga
NF
f = 2.5 GHz
VCE = 2 V
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products]
→ [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
<R>



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