BDY53_12 datasheet(2/3 Pages) COMSET

No. de pieza	BDY53

Descripción Electrónicos	SILICON TRANSISTORS, DIFFUSED MESA

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	COMSET [Comset Semiconductor]

Página de inicio	http://comset.halfin.com

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2 / 3 page

NPN BDY53 – BDY54

08/11/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

IC=100 mA, IB=0

BDY53

BDY54

120

IEBO

Emitter-Base Cutoff

Current

VEB=7 V

BDY53

3.0

BDY54

ICEX

Collector-Emitter Cutoff

Current

VCE=100 V

VBE=-1.5 V

TCASE=150°C

BDY53

VCE=150 V

VBE=-1.5 V

TCASE=150°C

BDY54

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=4.0 A, IB=0.4 A

BDY53

1.1

BDY54

IC=7.0 A, IB=1.4 A

BDY53

2.2

BDY54

VBE(SAT)

Base-Emitter Voltage (*)

IC=4.0 A, IB=0.4 A

BDY53

BDY54

IC=7.0 A, IB=1.4 A

BDY53

2.5

BDY54

h21E

Static Forward Current

transfer ratio (*)

VCE=1.5 V, IC=2 A

BDY53

BDY54

Transition Frequency

VCE=4.0 V, IC=0.5 A

f=10 MHz

BDY53

MHz

BDY54

td + tr

Turn-on time

IC=5 A, IB=1 A

BDY53

0.3

µs

BDY54

ts + tf

Turn-off time

IC=5 A

IB1=1 A

IB2=-0.5 A

BDY53

1.8

µs

BDY54

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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