MBRF3045CT datasheet(1/2 Pages) TGS

No. de pieza	MBRF3045CT

Descripción Electrónicos	TO-220F Plastic-Encapsulate Diodes

PDF	2 Pages

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Fabricante Electrónico	TGS [Tiger Electronic Co.,Ltd]

Página de inicio	http://www.tgselec.com

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1 / 2 page

B,Apr,2013

TO-220F Plastic-Encapsulate Diodes

MBR

F3030, 35, 40, 45, 50CT

SCHOTTKY BARRIER RECTIFIER

FEATURES

Schottky Barrier Chip

Guard Ring Die Construction for Transient Protection

Low Power Loss,High Efficiency

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUM RATINGS ( Ta=25

℃ unless otherwise noted )

Value

Unit

Symbol

Parameter

MBR

F30

30CT

MBR

F30

35CT

MBR

F30

40CT

MBR

F30

45CT

MBR

F30

50CT

VRRM

Peak repetitive reverse voltage

VRWM

Working peak reverse voltage

VR

DC blocking voltage

30

35

40

45

50

V

VR(RMS)

RMS reverse voltage

21

24.5

28

31.5

35

V

IO

Average rectified output current

30

A

IFSM

Non-Repetitive peak forward surge current

8.3ms half sine wave

200

A

PD

Power dissipation

2

W

RΘJA

Thermal resistance from junction to ambient

50

℃/W

Tj

Junction temperature

125

℃

Tstg

Storage temperature

-55~+150

℃

TO-220F

1. ANODE

2. CATHODE

3. ANODE

TIGER ELECTRONIC CO.,LTD

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MBRF3045CT Datasheet(PDF) 1 Page - Tiger Electronic Co.,Ltd

MBRF3045CT Datasheet(HTML) 1 Page - Tiger Electronic Co.,Ltd

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