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RJK0393DPA Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK0393DPA Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 7 page ![]() RJK0393DPA Preliminary R07DS0925EJ0400 Rev.4.00 Page 4 of 6 Mar 22, 2013 Case Temperature Tc (°C) Static Drain to Source On State Resistance vs. Temperature 10 8 6 4 2 –25 0 25 50 75 150 100 125 0 VGS = 4.5 V 10 V ID = 5 A, 10 A, 20 A 5 A, 10 A, 20 A Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 0 102030 10000 3000 1000 300 100 30 10 Ciss Coss Crss VGS = 0 f = 1 MHz 50 40 30 20 10 0 20 16 12 8 4 10 20 30 40 50 0 ID = 40 A VGS VDS VDD = 25 V 10 V VDD = 25 V 10 V Gate Charge Qg (nc) Dynamic Input Characteristics Source to Drain Voltage VSD (V) 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 Reverse Drain Current vs. Source to Drain Voltage 5 V 10 V 50 40 30 20 10 25 50 75 100 125 150 0 Channel Temperature Tch (°C) Maximum Avalanche Energy vs. Channel Temperature Derating Pulse Test Pulse Test IAP = 16 A VDD = 15 V duty < 0.1% Rg ≥ 50 Ω VGS = 0, –5 V |
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