ZQB50L datasheet(1/2 Pages) GXELECTRONICS

No. de pieza	ZQB50L

Descripción Electrónicos	Rating at 25??Ambient temp. Unless otherwise specified. Single phase, half sine wave, 60HZ,resistive or inductive load.

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Fabricante Electrónico	GXELECTRONICS [Gaomi Xinghe Electronics Co., Ltd.]

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ZQB50L THRU ZQB50H

BLOCK

特性：FEATURES

◆大电流承受能力.High current capability

◆低成本.Low cost

◆扩散烧结. Diffused junction

◆正向压降低.Low forward voltage drop

◆低漏电. Low leakage current

◆高浪涌承受能力.High surge current capability

◆35A 工作在表面温度是125℃,无热损耗的情况下.

35Ampere Operation At TL=125℃ With No Thermal Runaway

机械性能：MECHANICAL DATA

Dimension in millimeters

.

极限值和电参数

TA= 25℃除非另有规定. 单相,正半弦波,60HZ,阻抗或电感负载.为电容装载,减少电流的 20%

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ Ambient temp. Unless otherwise specified.Single phase, half sine wave, 60HZ,resistive or inductive load.

型

号 TYPE

符号

ZQB50L

ZQB50M

ZQB50H

单位

最大峰值反向电压

Maximum Current Peak Reverse Voltage

VRRM

16

20

28

V

最大反向有效值电压

Working Peak Reverse Voltage

VRMS

16

20

28

V

最大直流截止电压

Maximum DC Blocking Voltage

VDC

16

20

28

V

击穿电压最小值

Breakdown voltage Min@IBR=100mA/TA=25℃

VBRL

20

24

36

V

击穿电压最大值

Breakdown voltage Max@IBR=100mA/TA=25℃

VBRL

26

32

42

V

最大正向平均整流电流Ta=125℃，

Maximum Average Forward Rectified Current

IF（AV）

50

A

峰值正向浪涌电流

Peak Forward Surge Current 8.3ms Single

Sine-wave on Rated Load (JEDEC Method)

IFSM

500

A

最大瞬间正向压降＠100A

Maximum Instantaneous Forward Voltage

Drop at 100A DC

VF

1.02

V

最大反向直流电流 t=200ms

Maximum DC Reverse Current

Ta = 25℃

at Rated DC Blocking Voltage

Ta =150℃

IR

1.0

100

μA

工作及储存温度范围

Operating AND Storage Temperature Range

TJ

,TSTG

-55～+150

℃

ＧＡＯＭＩ　ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ．　　　　ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ　　　　　ＴＥＬ：０５３６－２２１０３５９　　　　　　　ＱＱ：４６４７６８０１７

1

ＸＩＮＧＨＥ　ＥＬＥＣＴＲＯＮＩＣＳ

星合电子

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