CS1615/16

6

DS961F1

3.2 Thermal Resistance

3.3 Absolute Maximum Ratings

Characteristics conditions:

All voltages are measured with respect to GND.

Note:

8.

Long-term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation at

the rate of 50 mW /°C for variation over temperature.

WARNING:

Operation at or beyond these limits may result in permanent damage to the device.

Normal operation is not guaranteed at these extremes.

Symbol

Parameter

SOIC

TSSOP

Unit



JA

Junction-to-Ambient Thermal Impedance

2 Layer PCB

4 Layer PCB

119

105

138

103

°C/W

°C/W



JC

Junction-to-Case Thermal Impedance

2 Layer PCB

4 Layer PCB

50

44

44

28

°C/W

°C/W

Pin

Symbol

Parameter

Value

Unit

14

IC Supply Voltage

18.5

V

2,8,9,

10,11,16

Analog Input Maximum Voltage

V

2,8,9,

10,11,16

Analog Input Maximum Current

5

mA

13

Gate Drive Output Voltage

V

13

Gate Drive Output Current

-1.0 / +0.5

A

1.1

A

15

mA

Total Power Dissipation

400

mW

Junction Temperature Operating Range

(Note 8)

-40 to +125

°C

Storage Temperature Range

-65 to +150

°C

All Pins

ESD

Electrostatic Discharge Capability

Human Body Model

Charged Device Model

2000

500

V

V