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LR024N Datasheet(PDF) 2 Page - International Rectifier |
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LR024N Datasheet(HTML) 2 Page - International Rectifier |
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2 / 13 page  AUIRLR/U024N 2 www.irf.com S D G Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) VDD = 25V, starting TJ = 25°C, L = 790µH, RG = 25Ω, IAS = 11A. (See Figure 12) ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact . Uses IRLZ24N data and test conditions. Notes: S D G ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C ––– ––– 0.065 ––– ––– 0.080 ––– ––– 0.110 VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V gfs Forward Transconductance 8.3 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 25 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Total Gate Charge ––– ––– 15 Qgs Gate-to-Source Charge ––– ––– 3.7 nC Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.5 td(on) Turn-On Delay Time ––– 7.1 ––– tr Rise Time –––74––– td(off) Turn-Off Delay Time ––– 20 ––– ns tf Fall Time –––29––– LD Internal Drain Inductance Between lead, nH 6mm (0.25in.) LS Internal Source Inductance from package and center of die contact Ciss Input Capacitance ––– 480 ––– Coss Output Capacitance ––– 130 ––– Crss Reverse Transfer Capacitance ––– 61 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) A ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 60 90 ns Qrr Reverse Recovery Charge ––– 130 200 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) RDS(on) Static Drain-to-Source On-Resistance Ω VGS = 5.0V, ID = 10A f VGS = 4.0V, ID = 9.0A f pF ––– ––– ––– ––– 17 72 ––– ––– ––– ––– 4.5 7.5 VGS = 5.0V,See Fig 6 and 13 fh VDD = 28V ID = 11A RG = 12 Ω, VGS = 5.0V TJ = 25°C, IS = 11A, VGS = 0V f TJ = 25°C, IF = 11A di/dt = 100A/µs f Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 10A f VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150°C MOSFET symbol showing the integral reverse p-n junction diode. VDS = 25V, ID = 11A ID = 11A VDS = 44V Conditions RD = 2.4 Ω, See Fig.10 Ãfh VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig.5 h VGS = 16V VGS = -16V |
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