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AOZ8000HIL Datasheet(PDF) 3 Page - Alpha & Omega Semiconductors

No. de pieza AOZ8000HIL
Descripción Electrónicos  Ultra-Low Capacitance TVS Diode Array
PDF  15 Pages
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Fabricante Electrónico  AOSMD [Alpha & Omega Semiconductors]
Página de inicio  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOZ8000HIL Datasheet(HTML) 3 Page - Alpha & Omega Semiconductors

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AOZ8000
Rev. 2.4 July 2010
www.aosmd.com
Page 3 of 15
Electrical Characteristics
Notes:
3. These specifications are guaranteed by design.
4. The working peak reverse voltage, VRWM, should be equal to or greater than the DC or continuous peak operating voltage level.
5. VBR is measured at the pulse test current IT.
6. Measurements performed with no external capacitor on VP (pin 5 floating).
7. Measurements performed with VP biased to 3.3 Volts (pin 5 @ 3.3V).
8. Measurements performed using a 100ns Transmission Line Pulse (TLP) system.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
VRWM
Reverse Working Voltage
Between pin 5 and 2(4)
5.5
V
VBR
Reverse Breakdown Voltage
IT = 1mA, between pins 5 and 2(5)
6.6
V
IR
Reverse Leakage Current
VRWM = 5V, between pins 5 and 2
0.1
µA
VF
Diode Forward Voltage
IF = 15mA
0.70
0.85
1
V
VCL
Channel Clamp Voltage
Positive Transients
Negative Transient
IPP = 1A, tp = 100ns, any I/O pin to
Ground(3)(6)(8)
10.0
-3.0
V
V
Channel Clamp Voltage
Positive Transients
Negative Transient
IPP = 5A, tp = 100ns, any I/O pin to
Ground(3)(6)(8)
11
-6.0
V
V
Channel Clamp Voltage
Positive Transients
Negative Transient
IPP = 12A, tp = 100ns, any I/O pin to
Ground(3)(6)(8)
15.0
-10.0
V
V
Cj
Junction Capacitance
VR = 0V, f = 1MHz, any I/O pin to Ground(3)(6)
1.85
1.94
pF
VR = 0V, f = 1MHz, between I/O pins(3)(6)
0.9
0.94
pF
VR = 0V, f = 1MHz, any I/O pin to Ground(3)(7)
1.0
1.17
pF
ΔCj
Channel Input Capacitance
Matching
VR = 0V, f = 1MHz, between I/O pins(3)(6)
0.03
pF



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