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SST12LP19E Datasheet(PDF) 10 Page - Microchip Technology |
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SST12LP19E Datasheet(HTML) 10 Page - Microchip Technology |
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10 / 23 page ![]() ©2013 Silicon Storage Technology, Inc. DS70005041C 05/13 10 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP19E Data Sheet Typical Performance Characteristics for High-power applications Test Conditions: VCC = 3.3V, TA = 25°C, 54 Mbps 802.11g OFDM Signal, QX6E example Figure 5: EVM versus Output Power, measured with Equalizer Channel Estimation set to “sequence only” Figure 6: Power Gain versus Output Power 1423 F5.1 0 1 2 3 4 5 6 7 8 9 10 01234567 8 9 10 11 12131415161718 19 20 21 22 23 24 25 Output Power (dBm) EVM versus Output Power Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz 1423 F6.0 Power Gain versus Output Power 10 12 14 16 18 20 22 24 26 28 30 01 234 56 7 8 9 101112 131415 161718 19 20 21 22 23 24 25 Output Power (dBm) Freq=2.412 GHz Freq=2.442 GHz Freq=2.472 GHz |
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