BLF2425M7LS140 datasheet(1/11 Pages) NXP

No. de pieza	BLF2425M7LS140

Descripción Electrónicos	Power LDMOS transistor

PDF	11 Pages

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Fabricante Electrónico	NXP [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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1.

Product profile

1.1 General description

140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at

frequencies from 2400 MHz to 2500 MHz.

The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW

applications and are assembled in high performance ceramic packages, available in

eared and earless versions

1.2 Features and benefits

 High efficiency

 High power gain

 Excellent ruggedness

 Excellent thermal stability

 Integrated ESD protection

 Designed for broadband operation (2400 MHz to 2500 MHz)

 Internally matched

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Industrial, scientific and medical applications in the frequency range from 2400 MHz to

2500 MHz

BLF2425M7L140;

BLF2425M7LS140

Power LDMOS transistor

Rev. 3 — 6 September 2012

Product data sheet

Table 1.

Typical performance

Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production

test circuit.

Test signal

f

VDS

PL(AV)

Gp



D

(MHz)

(V)

(W)

(dB)

(%)

CW

2450

28

140

18.5

52

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BLF2425M7LS140 Datasheet(PDF) 1 Page - NXP Semiconductors

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