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IXTP56N15T Datasheet(PDF) 2 Page - IXYS Corporation

No. de pieza IXTP56N15T
Descripción Electrónicos  N-Channel Enhancement Mode Avalanche Rated
PDF  5 Pages
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Fabricante Electrónico  IXYS [IXYS Corporation]
Página de inicio  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP56N15T Datasheet(HTML) 2 Page - IXYS Corporation

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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA56N15T
IXTP56N15T
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 10 V; ID =
28 A, Note 1
23
39
S
C
iss
2250
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
330
pF
C
rss
50
pF
t
d(on)
Resistive Switching Times
16
n s
t
r
V
GS = 10 V, VDS = 0.5 VDSS, ID = 28 A
17
n s
t
d(off)
R
G = 5 Ω (External)
43
n s
t
f
18
n s
Q
g(on)
34
nC
Q
gs
V
GS= 10 V, VDS = 0.5 VDSS, ID = 25 A
10
nC
Q
gd
11
nC
R
thJC
0.50
°C/W
R
thCH
TO-220
0.50
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0 V
56
A
I
SM
Pulse width limited by T
JM
160
A
V
SD
I
F =25 A, VGS = 0 V, Note 1
1.1
V
t
rr
I
F = 25 A, -di/dt = 100 A/μs
100
n s
V
R = 50 V, VGS = 0 V
Notes: 1. Pulse test, t
≤ 300 μs, duty cycle, d ≤ 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTA) Outline
Pins:
1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
Pins:
1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
TO-220 (IXTP) Outline
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development.
The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation.
IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
7,063,975B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728B1
6,583,505
6,710,463
6,771,478B2
7,071,537



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