ACE4953B datasheet(2/6 Pages) ACE

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ACE4953B

Dual P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Ordering information

ACE4953B XX + H

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-20V, VGS=0V

-1

Gate Leakage Current

IGSS

VGS=±12V, VDS=0V

100

Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-6A

mΩ

VGS=-4.5V, ID=-4.7A

VGS=-2.5V, ID=-1A

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250uA

-0.6

-0.8

-1.4

Forward Transconductance

gFS

VDS=-5V, ID=-5.5A

Diode Forward Voltage

VSD

VGS=0V, ISD=-1.7A

-0.8

-1.1

Maximum Body-Diode Continuous

Current

1.7

Switching

Total Gate Charge

VDS=-10V, VGS=-4.5V,

ID=-4.5A

8.92

11.6

Gate-Source Charge

Qgs

1.8

2.34

Gate-Drain Charge

Qgd

2.04

2.65

Turn-On Delay Time

td(on)

VGS=-4.5V, VDS=-10V,

RL=10Ω, RGEN=6Ω,

ID=-1A

16.08

32.16

Turn-On Rise Time

5.28

10.56

Turn-Off Delay Time

td(off)

37.6

75.2

Turn- Off Rise Time

7.28

14.5

Dynamic

Input Capacitance

Ciss

VDS=-10V, VGS=0V

f=1MHz

800

960

Output Capacitance

Coss

131

Reverse Transfer Capacitance

Crss

103

Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

B. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

FM : SOP-8

Pb - free

Halogen - free

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