1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

SOD-123 Schottky Barrier Diodes

The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular

MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for

high–efficiency UHF and VHF detector applications. Readily available to many other

fast switching RF and digital applications.

• Extremely Low Minority Carrier Lifetime

• Very Low Capacitance

• Low Reverse Leakage

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

MMSD301T1

MMSD701T1

VR

30

70

Vdc

Forward Power Dissipation

TA = 25°C

PF

225

mW

Junction Temperature

TJ

– 55 to +125

°C

Storage Temperature Range

Tstg

– 55 to +150

°C

DEVICE MARKING

MMSD301T1 = XT, MMSD701T1 = XH

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 µA)

MMSD301T1

MMSD701T1

V(BR)R

30

70

—

—

—

—

Volts

Diode Capacitance

(VR = 0, f = 1.0 MHz, Note 1)

MMSD301T1

MMSD701T1

CT

—

—

0.9

0.5

1.5

1.0

pF

Total Capacitance

(VR = 15 Volts, f = 1.0 MHz)

MMSD301T1

(VR = 20 Volts, f = 1.0 MHz)

MMSD701T1

CT

—

—

0.9

0.5

1.5

1.0

pF

Reverse Leakage

(VR = 25 V)

MMSD301T1

(VR = 35 V)

MMSD701T1

IR

—

—

13

9.0

200

200

nAdc

nAdc

Forward Voltage

(IF = 1.0 mAdc)

MMSD301T1

(IF = 10 mA)

(IF = 1.0 mAdc)

MMSD701T1

(IF = 10 mA)

VF

—

—

—

—

0.38

0.52

0.42

0.7

0.45

0.6

0.5

1.0

Vdc

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMSD301T1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMSD301T1

MMSD701T1

CASE 425–04, STYLE 1

SOD–123

1

2

Motorola Preferred Devices

1

Cathode

2

Anode

replaces MMSD101T1/D