MMDF3C03HD datasheet(4/12 Pages) MOTOROLA

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MMDF3C03HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel

P–Channel

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

ID, DRAIN CURRENT (AMPS)

1.5

1.0

0.18

0.12

0.10

0.08

0.06

0.04

2.0

4.0

5.5

3.0

4.5

5.0

2.5

TJ = 25°C

VGS = 4.5 V

10 V

3.5

0.16

0.14

–25

–50

TJ, JUNCTION TEMPERATURE (°C)

1.2

0.8

0.6

0.4

0.2

100

1.0

125

150

1.6

1.4

VGS = 10 V

ID = 1.5 A

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

5.0

100

1.0

VGS = 0 V

TJ = 125°C

100

°C

ID, DRAIN CURRENT (AMPS)

2.0

1.0

0.050

0.045

0.040

0.035

0.030

0.025

3.0

4.0

5.0

6.0

7.0

8.0

9.0

TJ = 25°C

VGS = 4.5 V

10 V

–25

–50

TJ, JUNCTION TEMPERATURE (°C)

1.2

0.8

0.6

0.4

0.2

100

1.0

125

150

1.6

1.4

1.8

VGS = 10 V

ID = 3 A

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

5.0

1000

100

1.0

0.1

VGS = 0 V

TJ = 125°C

100

°C

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