MMDF2C03HD datasheet(4/12 Pages) MOTOROLA

No. de pieza	MMDF2C03HD

Descripción Electrónicos	COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

PDF	12 Pages

Scroll/Zoom	100%

Fabricante Electrónico	MOTOROLA [Motorola, Inc]

Página de inicio	http://www.freescale.com

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MMDF2C03HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel

P–Channel

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

0.4

0.5

0.6

0.3

0.1

0.2

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID = 1.5 A

TJ = 25°C

0.05

ID, DRAIN CURRENT (AMPS)

0.08

0.5

2.5

0.06

0.07

1.5

10 V

VGS = 4.5

TJ = 25°C

TJ, JUNCTION TEMPERATURE (°C)

– 50

100

150

0.5

1.0

1.5

2.0

VGS = 10 V

ID = 1.5 A

125

– 25

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

0.5

1.5

0.10

0.15

0.20

0.25

0.30

TJ = 25°C

VGS = 4.5 V

2.5

3.5

10 V

0.1

0.3

0.4

0.6

ID = 1 A

TJ = 25°C

0.2

0.5

TJ, JUNCTION TEMPERATURE (°C)

– 50

100

150

0.6

VGS = 10 V

ID = 2 A

1.4

– 25

125

0.8

1.6

1.2

1.0

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