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APT8065BVR Datasheet(PDF) 3 Page - Advanced Power Technology

No. de pieza APT8065BVR
Descripción Electrónicos  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
PDF  4 Pages
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Fabricante Electrónico  ADPOW [Advanced Power Technology]
Página de inicio  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT8065BVR Datasheet(HTML) 3 Page - Advanced Power Technology

  APT8065BVR Datasheet HTML 1Page - Advanced Power Technology APT8065BVR Datasheet HTML 2Page - Advanced Power Technology APT8065BVR Datasheet HTML 3Page - Advanced Power Technology APT8065BVR Datasheet HTML 4Page - Advanced Power Technology  
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V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT8065BVR
0
100
200
300
400
0
2468
10
12
0
2468
0
5
10
15
20
25
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
16
12
8
4
0
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
16
12
8
4
0
30
24
18
12
6
0
14
12
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250
µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4.5V
4V
VGS=5V, 5.5V, 6V, 7V, 10V & 15V
4.5V
4V
VGS=10V
VGS=20V
TJ = -55°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=6V, 7V, 10V & 15V
VGS=5V & 5.5V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]



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