DYNAMIC CHARACTERISTICS

APT's devices are covered by one or more of the following U.S.patents: 4,895,810

5,045,903

5,089,434

5,182,234

5,019,522

5,262,336

5,256,583

4,748,103

5,283,202

5,231,474

5,434,095

5,528,058

19.51 (.768)

20.50 (.807)

19.81 (.780)

21.39 (.842)

25.48 (1.003)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

0.76 (.030)

1.30 (.051)

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

2.59 (.102)

3.00 (.118)

0.48 (.019)

0.84 (.033)

Drain

Source

Gate

Dimensions in Millimeters and (Inches)

2.29 (.090)

2.69 (.106)

5.79 (.228)

6.20 (.244)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC

2-Plcs.

APT8014L2LL

ADVANCE

TECHNICAL

INFORMATION

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25°C

R

G

= 0.6

W

MIN

TYP

MAX

7710

1480

244

284

37

161

20

19

69

15

UNIT

pF

nC

ns

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

GS

= 0V, I

S

= -I

D[Cont.]

)

Reverse Recovery Time (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

V/ns

MIN

TYP

MAX

52

208

1.3

930

29.0

10

temperature.

D

V

V

DSS

T

150

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.14

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dt