Symbol

V

DSS

I

D

I

DM

, l

LM

V

GS

P

D

T

J

,T

STG

T

L

Parameter

Drain-Source Voltage

Pulsed Drain Current

Gate-Source Voltage

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

(V

GS

= 0V, I

D

= 250

µA)

(V

DS

> I

D

(ON) x R

DS

(ON) Max, V

GS

= 10V)

Drain-Source On-State Resistance

2

(V

GS

= 10V, 0.5 I

D

[Cont.])

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125

°C)

Gate-Source Leakage Current (V

GS

=

±30V, V

DS

= 0V)

Gate Threshold Voltage

(V

DS

= V

GS

, I

D

= 2.5mA)

THERMAL CHARACTERISTICS

Symbol

Characteristic

Junction to Case

MIN

TYP

MAX

0.24

0.06

UNIT

°C/W

Symbol

BV

DSS

I

D

(ON)

R

DS

(ON)

I

DSS

I

GSS

V

GS

(TH)

MIN

TYP

MAX

APT6015JN

600

APT6018JN

600

APT6015JN

38

APT6018JN

35

APT6015JN

0.15

APT6018JN

0.18

250

1000

±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

UNIT

Volts

Amps

Volts

Watts

W/

°C

°C

APT

APT

6015JN

6018JN

600

600

38

35

152

140

±30

520

4.16

-55 to 150

300

MAXIMUM RATINGS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

SOT-227

G

S

S

D

APT6015JN

600V

38.0A 0.15

Ω

APT6018JN

600V

35.0A 0.18

Ω

"UL Recognized" File No. E145592 (S)

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

USA

405 S.W. Columbia Street

Bend, Oregon 97702 -1035

Phone: (541) 382-8028

FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15

FAX: (33) 5 56 47 97 61

G

D

S