Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25

°C

V

GS

= 15V

V

DD

= 0.5 V

DSS

I

D

= I

D[Cont.]

@ 25

°C

R

G

= 0.6

Ω

MIN

TYP

MAX

16800

2400

1070

700

85

360

25

30

80

14

UNIT

pF

nC

ns

APT40M35PVR

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

GS

= 0V, I

S

= -I

D[Cont.]

)

Reverse Recovery Time (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/

µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dl

S

/dt = 100A/

µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

MIN

TYP

MAX

89

356

1.3

700

19

temperature.

µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.20

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

P-Pack Package Outline

29.34 (1.155)

29.08 (1.145)

35.81 (1.41)

35.31 (1.39)

51.05 (2.01)

50.55 (1.99)

3.43 (.135)

2.92 (.115)

(4-Places)

11.63 (.458)

11.13 (.438)

12.45 (.490)

11.94 (.470)

35.18 (1.385)

34.67 (1.365)

41.53 (1.635)

41.02 (1.615)

3.43 (.135)

2.92 (.115)

(4-Places)

5.33 (.210)

4.83 (.190)

1.40 (.055)

1.02 (.040)

9.27 (.365)

8.64 (.340)

.635 (.025)

.381 (.015)

4.39 (.173)

4.14 (.163)

(4 Places)

Dimensions in Millimeters and (Inches)

28.70 (1.130)

28.45 (1.120)

4.06 (.160)

3.81 (.150)

(5 Places)

10.92 (.430)

10.67 (.420)