APT1002R4BN datasheet(4/4 Pages) ADPOW

No. de pieza	APT1002R4BN

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

PDF	4 Pages

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Fabricante Electrónico	ADPOW [Advanced Power Technology]

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, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

Qg, TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TO-247AD Package Outline

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

3.55 (.140)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Source

Gate

Dimensions in Millimeters and (Inches)

2-Plcs.

T =+25

°C

T =+150

°C

SINGLE PULSE

100

1,000

10,000

100

1.0

1.5

2.0

040

T =+150

°C

T =+25

°C

Crss

iss

oss

=500V

100mS

10mS

1mS

100

µS

100

APT1002R/1002R4BN

50 100

1000

=200V

=100V

= I

[Cont.]

APT1002RBN

APT1002R4BN

OPERATION HERE

LIMITED BY R

(ON)

APT1002R/1002R4BN

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