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ADR421AR Datasheet(PDF) 2 Page - Analog Devices

No. de pieza ADR421AR
Descripción Electrónicos  Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References
PDF  16 Pages
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Fabricante Electrónico  AD [Analog Devices]
Página de inicio  http://www.analog.com
Logo AD - Analog Devices

ADR421AR Datasheet(HTML) 2 Page - Analog Devices

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REV. B
–2–
ADR42x–SPECIFICATIONS
ADR420 ELECTRICAL SPECIFICATIONS
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Voltage
A Grade
VO
2.045
2.048
2.051
V
Initial Accuracy
VOERR
–3
+3
mV
–0.15
+0.15
%
Output Voltage
B Grade
VO
2.047
2.048
2.049
V
Initial Accuracy
VOERR
–1
+1
mV
–0.05
+0.05
%
Temperature Coefficient A Grade
TCVO
–40
°C < T
A < +125
°C
2
10
ppm/
°C
B Grade
1
3
ppm/
°C
Supply Voltage Headroom
VIN – VO
2V
Line Regulation
∆V
O/
∆V
IN
VIN = 5 V to 18 V
10
35
ppm/V
–40
°C < TA < +125°C
Load Regulation
∆VO/∆ILOAD
ILOAD = 0 mA to 10 mA
70
ppm/mA
–40
°C < T
A < +125
°C
Quiescent Current
IIN
No Load
390
500
µA
–40
°C < TA < +125°C
600
µA
Voltage Noise
eN p-p
0.1 Hz to 10 Hz
1.75
µV p-p
Voltage Noise Density
eN
1 kHz
60
nV/
√Hz
Turn-On Settling Time
tR
10
µs
Long-Term Stability
∆V
O
1,000 Hours
50
ppm
Output Voltage Hysteresis
VO_HYS
40
ppm
Ripple Rejection Ratio
RRR
fIN = 10 kHz
75
dB
Short Circuit to GND
ISC
27
mA
Specifications subject to change without notice.
(@ VIN = 5.0 V to 15.0 V, TA = 25 C, unless otherwise noted.)
ADR421 ELECTRICAL SPECIFICATIONS
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Output Voltage
A Grade
VO
2.497
2.500
2.503
V
Initial Accuracy
VOERR
–3
+3
mV
–0.12
+0.12
%
Output Voltage
B Grade
VO
2.499
2.500
2.501
V
Initial Accuracy
VOERR
–1
+1
mV
–0.04
+0.04
%
Temperature Coefficient A Grade
TCVO
–40
°C < TA < +125°C
2
10
ppm/
°C
B Grade
1
3
ppm/
°C
Supply Voltage Headroom
VIN – VO
2V
Line Regulation
∆VO/∆VIN
VIN = 5 V to 18 V
10
35
ppm/V
–40
°C < T
A < +125
°C
Load Regulation
∆VO/∆ILOAD
ILOAD = 0 mA to 10 mA
70
ppm/mA
–40
°C < TA < +125°C
Quiescent Current
IIN
No Load
390
500
µA
–40
°C < TA < +125°C
600
µA
Voltage Noise
eN p-p
0.1 Hz to 10 Hz
1.75
µV p-p
Voltage Noise Density
eN
1 kHz
80
nV/
√Hz
Turn-On Settling Time
tR
10
µs
Long-Term Stability
∆VO
1,000 Hours
50
ppm
Output Voltage Hysteresis
VO_HYS
40
ppm
Ripple Rejection Ratio
RRR
fIN = 10 kHz
75
dB
Short Circuit to GND
ISC
27
mA
Specifications subject to change without notice.
(@ VIN = 5.0 V to 15.0 V, TA = 25 C, unless otherwise noted.)



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