AOWF25S65 datasheet(2/6 Pages) AOSMD

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AOW25S65/AOWF25S65

Symbol

Min

Typ

Max

Units

650

700

750

IGSS

Gate-Body leakage current

±100

VGS(th)

Gate Threshold Voltage

2.6

3.3

0.165

0.19

Ω

0.47

0.53

Ω

VSD

0.84

Maximum Body-Diode Continuous Current

ISM

104

Ciss

1278

Coss

Co(er)

64.5

Co(tr)

236.7

Crss

1.4

4.9

Ω

26.4

Qgs

6.2

Qgd

9.5

tD(on)

tD(off)

112

trr

408

Irm

Qrr

8.27

µC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

IF=12.5A,dI/dt=100A/µs,VDS=400V

VGS=10V, VDS=400V, ID=12.5A,

RG=25Ω

Total Gate Charge

VGS=10V, VDS=480V, ID=12.5A

Gate Source Charge

Gate Drain Charge

Body Diode Reverse Recovery Charge IF=12.5A,dI/dt=100A/µs,VDS=400V

Maximum Body-Diode Pulsed Current

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

Body Diode Reverse Recovery Time

Peak Reverse Recovery Current

Turn-Off Fall Time

RDS(ON)

Static Drain-Source On-Resistance

IS=7.5A,VGS=0V, TJ=25°C

Diode Forward Voltage

VGS=10V, ID=12.5A, TJ=25°C

VGS=10V, ID=12.5A, TJ=150°C

Reverse Transfer Capacitance

Effective output capacitance, time

SWITCHING PARAMETERS

Input Capacitance

VGS=0V, VDS=100V, f=1MHz

Output Capacitance

VGS=0V, VDS=100V, f=1MHz

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Effective output capacitance, energy

Zero Gate Voltage Drain Current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

ID=250µA, VGS=0V, TJ=150°C

IDSS

µA

VDS=650V, VGS=0V

BVDSS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

VGS=0V, VDS=0 to 480V, f=1MHz

VDS=5V,ID=250µA

VDS=520V, TJ=150°C

VDS=0V, VGS=±30V

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ

=25°C.

D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

G. L=60mH, IAS=5A, VDD=150V, Starting TJ=25°C

H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.

I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.

J. Wavesoldering only allowed at leads.

Rev0: Dec 2011

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