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477KXM063M Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

No. de pieza 477KXM063M
Descripción Electrónicos  RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
PDF  19 Pages
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Fabricante Electrónico  FREESCALE [Freescale Semiconductor, Inc]
Página de inicio  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

477KXM063M Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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RF Device Data
Freescale Semiconductor
MRF6V2300NR1 MRF6V2300NBR1
TYPICAL CHARACTERISTICS
Figure 10. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD =20 V
25 V
400
14
28
0
200
50
18
16
100
150
24
22
26
IDQ = 900 mA
f = 220 MHz
35 V
40 V
50 V
20
250
300
350
45 V
35
35
60
10
25_C
TC =--30_C
85_C
25
15
50
45
40
Pin, INPUT POWER (dBm)
Figure 11. Power Output versus Power Input
VDD =50 Vdc
IDQ = 900 mA
f = 220 MHz
20
30
55
22
29
5
10
80
10
28
26
24
70
60
50
40
30
20
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
ηD
27
25
23
100
600
25_C
TC =--30_C
85_C
85_C
--32
--28
--29
--30
--31
--33
240
160
IMD3
Gps
f, FREQUENCY (MHz)
Figure 13. VHF Broadcast Broadband Performance
230
220
210
200
190
180
170
25
24
15
65
55
45
40
30
20
22
20
18
16
15
23
21
19
17
60
50
35
25
ηD
VDD =50 V,Pout = 300 W (Peak)
IDQ = 1100 mA, Tone--Spacing = 100 kHz
Gps
VDD =50 Vdc
IDQ = 900 mA
f = 220 MHz
25_C
--30_C
30 V



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