1

Motorola Bipolar Power Transistor Device Data

High-Power NPN Silicon

Transistor

. . . for use as an output device in complementary audio amplifiers to 100–Watts

music power per channel.

• High DC Current Gain — hFE = 25–100 @ IC = 7.5 A

• Excellent Safe Operating Area

• Complement to the PNP MJ4502

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCER

100

Vdc

Collector–Base Voltage

VCB

100

Vdc

Collector–Emitter Voltage

VCEO

90

Vdc

Emitter–Base Voltage

VEB

4.0

Vdc

Collector Current

IC

30

Adc

Base Current

IB

7.5

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

_C

PD

200

1.14

Watts

W/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

0.875

_C/W

200

150

100

50

0

40

60

120

140

200

Figure 1. Power–Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

0

20

80

100

160

180

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ802/D

MJ802

30 AMPERE

POWER TRANSISTOR

NPN SILICON

100 VOLTS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

REV 7