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H07N65 Datasheet(PDF) 6 Page - Hi-Sincerity Mocroelectronics

No. de pieza H07N65
Descripción Electrónicos  N-Channel Power Field Effect Transistor
PDF  6 Pages
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Fabricante Electrónico  HSMC [Hi-Sincerity Mocroelectronics]
Página de inicio  http://www.hsmc.com.tw
Logo HSMC - Hi-Sincerity Mocroelectronics

H07N65 Datasheet(HTML) 6 Page - Hi-Sincerity Mocroelectronics

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200801
Issued Date : 2008.07.22
Revised Date : 2009.0514
Page No. : 6/6
H07N65E, H07N65F
HSMC Product Specification
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
tL
Ramp-down
Ramp-up
Tsmax
Tsmin
Critical Zone
TL to TP
tS
Preheat
TL
TP
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (TL to TP)
<3
oC/sec
<3
oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100
oC
150
oC
60~120 sec
150
oC
200
oC
60~180 sec
Tsmax to TL
- Ramp-up Rate
<3
oC/sec
<3
oC/sec
Time maintained above:
- Temperature (TL)
- Time (tL)
183
oC
60~150 sec
217
oC
60~150 sec
Peak Temperature (TP)
240
oC +0/-5oC
260
oC +0/-5oC
Time within 5
oC of actual Peak
Temperature (tP)
10~30 sec
20~40 sec
Ramp-down Rate
<6
oC/sec
<6
oC/sec
Time 25
oC to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Peak temperature
Dipping time
Pb devices.
245
oC
±5oC
10sec
±1sec
Pb-Free devices.
260
oC
±5oC
10sec
±1sec



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