BUW13 datasheet(1/3 Pages) COMSET

No. de pieza	BUW13

Descripción Electrónicos	HIGH VOLTAGE, HIGH SPEED POWER TRANSISTOR

PDF	3 Pages

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Fabricante Electrónico	COMSET [Comset Semiconductor]

Página de inicio	http://comset.halfin.com

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NPN BUW13 - BUW13A

COMSET SEMICONDUCTORS

1/3

The BUW13-A are silicon NPN power transistor in TO3PN package.

They are intended for use in switching regulators, motor control systems, inverters and

converters.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

BUW13

BUW13A

VCEO

Collector-Emitter Voltage

IB = 0

400

450

V

VCBO

Collector-Base Voltage

IE = 0

850

1000

V

VEBO

Emitter-Base Voltage

IC = 0

9

V

IC

Collector Current

15

A

ICM

Collector Current Peak

30

A

IB

Base Current

6

A

IBM

Base Current Peak

9

A

Pt

Total Power Dissipation

@ TC = 25°

175

Watts

TJ

Junction Temperature

150

°C

TStg

Storage Temperature

-65 to 175

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJC

Thermal Resistance, Junction to Case

0.7

°C/W

H

HIIG

GH

H V

VO

OL

LT

TA

AG

GE

E,, H

HIIG

GH

H S

SP

PE

EE

ED

D P

PO

OW

WE

ER

R T

TR

RA

AN

NS

SIIS

ST

TO

OR

R

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BUW13 Datasheet(PDF) 1 Page - Comset Semiconductor

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